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| geometry process details principal device types ues1001 thru ues1003 uf4001 thru uf4007 cmr1u-01 series cmr1u-01m series gross die per 4 inch wafer 4,250 process cpd16 ultra fast rectifier 1 amp glass passivated rectifier chip process glass passivated mesa die size 51 x 51 mils die thickness 14 mils anode bonding pad area 34 x 34 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? backside cathode www.centralsemi.com r4 (22-march 2010)
process cpd16 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD1610
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